International Conference on Nano-photonics and Nano-optoelectronics 2018(ICNN2018)

Program

April 25 Wed.

ICNN1: Nano Devices
Chair: J.J. Finley(Technical University of Munich, Germany)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
13:30	13:45		WELCOME ADDRESS	Yasuhiko Arakawa The University of Tokyo, Japan
13:45	14:15	ICNN1-1 Invited	Application of Photonic Trumpets to Hybrid Optomechanics and Quantum Sensing	Jean-Michel Gerard CEA/ INAC Grenoble, France	Free standing GaAs wires are both photonic wires and mechanical resonators. I will review appealing novel opportunities generated by the giant optomechanical coupling between exciton states and vibrations for QDs embedded in a photonic trumpet.
14:15	14:30	ICNN1-2	Transfer-printed Quantum-dot Single Photon Sources for Efficient Waveguide Coupling	Ryota Katsumi¹, Yasutomo Ota², Masahiro Kakuda², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 ¹IIS, Japan, ²NanoQuine, Japan	We designed single photon source structure supporting near-unity waveguide coupling, which is robust against position misalignments accompanied by transfer-printing-based integration approach. Experimentally, we observed single photon generation from a transfer-printed quantum-dot single photon sources.
14:30	14:45	ICNN1-3	Engineering the Photoresponse of InAs Nanowires	Jack Alexander-Webber Department of Engineering, University of Cambridge, UK	We exploit the sensitivity of InAs nanowires to surface states, through controlled growth conditions and surface passivation treatments, to develop optoelectronic devices with a highly tunable photoresponse.
14:45	15:00	ICNN1-4	GeSn/Ge Dual-Nanowire Grown by Molecular Beam Epitaxy for Light Source on Si	Yuxin Song Shanghai Institute of Microsys, China	GeSn/Ge dual nanowire is demonstrated by MBE. The strain field analyzed by Raman and FEM shows that the compressive strain in GeSn is effectively relaxed, beneficial for direct bandgap conversion, potential for Si-based light source.
15:00	15:30	Break

ICNN2: Quantum Dots and Nanowires
Chair: J. P. Reithmaier(University of Kassel, Germany)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
15:30	16:00	ICNN2-1 Invited	Semiconductor Quantum Dots and 2D Materials for Nanophotonics	C. Schneider¹, C. P. Dietrich¹, S. Klembt¹, L. Dusanowski¹, M. Dusanowski¹, S. Höfling^1,2 ¹University of Würzburg, Würzburg, Germany, ²University of St Andrews, St Andrews, UK	see abstract book
16:00	16:15	ICNN2-2	Evaluation of Inter-Sublevel Transition of InAs/GaAs Quantum Dot Structures on On-Axis Si (100) Substrate by Photocurrent Measurement	Hirofumi Yoshikawa^1,2,3, Jinkwan Kwoen¹, Takahiro Doe^1,3, Makoto Izumi³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 ¹Institute for Nano Quantum Information Electronics, University of Tokyo, Japan, ²Institute of Industrial Science, University of Tokyo, Japan, ³Corporate Research and Development BU, SHARP Corporation, Japan	We report the evaluation of inter-sublevel transition of InAs/GaAs quantum dot structures directly grown on on-axis Si (100) substrate by photocurrent measurement.
16:15	16:30	ICNN2-3	Far Infrared Intersubband Photodetectors Based on Quantum Disc in Nanowire Arrays with Photoresponse to Normal Incidence Radiation	Mohammad Karimi^1,2 ¹Solid State Physics and NanoLund, Lund University, Sweden, ²Halmstad University, Sweden	Abstract attached
16:30	16:45	ICNN2-4	One-Dimensional Electronic States in Closely Stacked InAs/GaAs Quantum Dots with Different Growth Temperatures	Toshiyuki Kaizu, Kazuki Hirao, Takashi Kita Kobe University, Japan	We achieved the emission wavelength tuning of the closely stacked InAs/GaAs quantum dots by varying the growth temperature and demonstrated their one-dimensional miniband formation from the polarization anisotropy and PL decay lifetime obeying T0.5 dependence.
16:45	17:00	ICNN2-5	Strain Analysis of InPBi Quantum Dots	Liyao Zhang University of Shanghai for Science and Technology, China	InPBi thin film crystal was first realized in 2013. The photoluminescence of InPBi is strong and broad at room temperature. The strain effects on the optical properties of InPBi QDs are discussed through FEM simulation.

April 26 Thu.

ICNN3: Quantum Optics & Plasmonics
Chair: C. Chang-Hasnain(University of California, Berkeley, USA)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
9:00	9:30	ICNN3-1 Invited	Degenerate Optical Parametric Oscillators for Solving Ising Model	Hiroki Takesue NTT Basic Research Laboratories, NTT Corporation, Japan	I describe our effort to generate thousands of time-multiplexed degenerate optical parametric oscillators for a coherent Ising machine, using kilometers-long fiber cavities and the telecommunications-band phase sensitive amplifiers.
9:30	9:45	ICNN3-2	Spin-Glass Problem Solved with Coupled Plasmon Particle System	Toshiharu Saiki, Yusuke Hirukawa Keio University, Japan	We proposed an idea to implement an algorithm for Ising spin glass problem to coupled plasmon particles interacting with a phase-change material to modify the dipole-dipole interaction autonomously so as to reach the solution efficiently.
9:45	10;00	ICNN3-3	Enhanced Optical Absorption of Graphene Monolayer with Attenuated Total-Reflection Configuration in the Visible Range	Gaige Zheng¹, Linhua Xu¹, Jicheng Wang², Min Lai¹ ¹Nanjing University of Information Science & Technology, China, ²Jiangnan University, China	We propose novel possible operation principle for graphene-based absorber through the resonant coupling of the external electromagnetic radiation in an attenuated total-reflection structure.
10:00	10:15	ICNN3-4	Surface Plasmon Polariton Generation in Carbon Nanotube	Sergey Moiseev, Aleksei Kadochkin, Yuliya Dadoenkova, Igor Zolotovskii Ulyanovsk State University, Russia	We have shown the possibility of far infrared surface plasmon polariton generation in a single-walled CNT. In such generator the amplification is created by drift currents, and the feedback is realized due to periodically profiled
10:15	10:30	ICNN3-5	Coherent Absorption At Interfaces for Film Thickness Measurement to Plasmonic Selective Excitation	Fei He¹, Kevin Macdonald², Xu Fang¹ ¹Department of Electronics and Computer Science, University of Southampton, UK, ²Optoelectronics Research Centre and Centre for Photonic Metamaterials, University of Southampton, UK	We demonstrate using two coherent light beams to measure the thickness of absorptive thin films and selectively excite plasmonic resonances at the surface of transparent bulk substrates.
10:30	11:00	Break

ICNN4: Nanolasers and Photonic Devices
Chair: M. Takenaka(The University of Tokyo, Japan)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
11:00	11:30	ICNN4-1 Invited	TBA	Connie Chang-Hasnain University of California, Berkeley, USA	see abstract book
11:30	11:45	ICNN4-2	Quantum-Dot Nanolaser Integrated on a Silicon Waveguide Buried in Silicon Dioxide by Transfer Printing	Alto Osada¹, Yasutomo Ota¹, Ryota Katsumi², Katsuyuki Watanabe¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 ¹Institute for Nano Quantum Information Electronics, The University of Tokyo, Japan, ²Institute of Industrial Science, The University of Tokyo, Japan	We report the hybrid integration of a quantum dot nanolaser on silicon photonic circuits using transfer printing. The pick-and-place assembly method facilitates the integration of a nanolaser on a single CMOS-processed silicon waveguide.
11:45	12:00	ICNN4-3	Observation of Anomalous Er Emission in a Er,O-codoped GaAs-based Two Dimensional Photonic Crystal Nanocavity	Natsuki Fujioka, Masayuki Ogawa, Taiki Kishina, Ryoma Higashi, Masahiko Kondow, Jun Tatebayashi, Yasufumi Fujiwara Graduate School of Engineering, Osaka University, Japan	We report on the fabrication of a GaAs:Er,O-based two-dimensional PhC nanocavity and the observation of characteristic behavior of Er emission from the nanocavity.
12:00	13:00	Lunch Break

ICNN6: Silicon Photonics
Chair: R. Taylor(University of Oxford, UK)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
14:30	15:00	ICNN6-1 Invited	Efficient Phase Modulation based on Si Hybrid MOS Capacitor for Universal Photonic Integrated Circuits	Mitsuru Takenaka, Shinichi Takagi The University of Tokyo, Japan	Owing to the large electron-induced refractive index change in InGaAsP, we have successfully demonstrated efficient, low-loss, and low-power optical phase modulation by using the Si hybrid MOS capacitor, suitable for large-scale universal PICs.
15:00	15:15	ICNN6-2	Membrane Buried Heterostrucutre Lasers Integrated on Silicon Nanowire Waveguide	Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo NTT Device Technology Laboratories, NTT Corporation, Japan	We present a 2-mm-long lateral current-injection membrane buried heterostructure laser on a 200-nm-thick Si waveguide. The maximum output power emitted from the Si waveguide is 36 mW.
15:15	15:30	ICNN6-3	Linear-Spectral Mach-Zehnder Interferometer with Fano-Resonant Graded-Stub Filters Based on Pillar Photonic Crystal Waveguides	Masatoshi Tokushima Photonics Electronics Technology Research Association (PETRA), Japan	We proposed a linear-spectral Mach-Zehnder interferometer with graded-stub filters based on pillar photonic crystal waveguides that can output the transmitted light from ports other than the input one.
15:30	15:45	ICNN6-4	Nonlinear Al-Si-Al Plasmonic Waveguide and Its Application to A Photodetector	Hidetaka Nishi, Tai Tsuchizawa, Maasaki Ono, Masaya Notomi, Hiroshi Fukuda, Shinji Matsuo NTT, Japan	We report on observation of two-photon absorption within an Al-Si-Al plasmonic waveguide. By utilizing internal photoemission at the Al-Si boundary and nonlinear carrier generation, we applied it to a photodetector for over 45-Gbit/s data reception.
15:45	16:00	Break

ICNN7: Quantum Dots and Lasers
Chair: M. Holmes(The University of Tokyo, Japan)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
16:00	16:30	ICNN7-1 Invited	Integration of III-V Nanowire Lasers on Silicon: Physics and Materials Aspects	Jonathan James Finley Technical University of Munich, Germany	see abstract book
16:30	17:00	ICNN7-2 Invited	Temperature Insensitive Quantum Dot Lasers and Optical Amplifiers	Johann Peter Reithmaier¹, Gadi Eisenstein² ¹University of Kassel, Germany, ²Technion-Isarel, Institute of Technology, Haifa, Israel	A review is given on the application of improved QD gain material with low temperature sensitivity for high-speed lasers and semiconductor optical amplifiers (SOAs) working in the 1.5 um wavelength range.
17:00	17:15	ICNN7-3	Room-Temperature Continuous-Wave Operation of InAs/GaAs Quantum Dot Lasers on On-Axis Si (001) Just Substrate	Jinkwan Kwoen¹, Bongyong Jang¹, Takeo Kageyama¹, Katsuyuki Watanabe², Yasuhiko Arakawa^1,2 ¹NanoQunie, The University of Tokyo, Japan, ²IIS, The University of Tokyo, Japan	We report the room temperature ‘continuous-wave’ operation of InAs / GaAs quantum dot lasers directly grown on Si (001) just substrate by miniaturizing the laser structure.
17:15	17:30	ICNN7-4	Amplified Spontaneous Emission and Lasing from Cesium Lead Halide Perovskite Nanocubes	Zhengzheng Liu¹, Zhiping Hu², Tongchao Shi¹, Zeyu Zhang¹, Xin Xing¹, Xiaosheng Tang², Juan Du¹, Yuxin Leng¹ ¹Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, China, ²Chongqing University, China	We report tunable amplified spontaneous emission and low-threshold lasing from cesium lead halide perovskite CsPbX3 (X=Br/I/Cl) nanocubes with high quality and enhanced stability by facile low-temperature, solution-processed method.

April 27 Fri.

ICNN8: Photonic Crystals
Chair: C. Schuck(University of Munster, Germany)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
9:00	9:30	ICNN8-1 Invited	Gan-On-Si Photonic Crystal Cavities	Nicolas Grandjean École polytechnique fédérale de Lausanne, Switzerland	see abstract book
9:30	9:45	ICNN8-2	Machine Learning of The Relationship Between Q-Factors and Structures of Nanocavities	TAKASHI ASANO, SUSUMU NODA Kyoto University, Japan	We report on the results of machine learning of the relationship between the Q factors and structures of nanocavities using a convolutional neural network, which is aimed at developing more efficient optimization method.
9:45	10:00	ICNN8-3	Analysis on Giant Light Scattering near a Dirac Point in a Photonic Crystal	Yasutomo Ota¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 ¹Nanoquine, Japan, ²IIS, Japan	We analyze light scattering near a Dirac point in a 2D photonic crystal by electromagnetic simulations. We demonstrate giant light scattering by a tiny cavity embedded in the photonic crystal around the Dirac point frequency.
10:00	10:15	ICNN8-4	Three-Dimensional Photonic Crystal Nanocavity Fabricated by A Micro-Manipulation Technique Under Optical Microscope Observation	Takeshi Ishida¹, Shun Takahashi^1,2, Takeyoshi Tajiri¹, Katsuyuki Watanabe¹, Yasutomo Ota¹, Satoshi Iwamoto¹, Yasuhiko Arakawa¹ ¹The University of Tokyo, Japan, ²Kyoto Institute of Technology, Japan	We fabricated a three-dimensional photonic crystal nanocavity by a micro-manipulation technique under optical microscope observation. The fabrication error was comparable to the previous technique under SEM observation where the electron beam damaged the nanocavity.
10:15	10:30	ICNN8-5	Engineering Photoluminescence Characteristics of Nano-Phosphor Using Photonic Structure	Arvind Kumar Gathania¹, Shashi Thakur¹, Naresh Dhiman², Kirtpreet Singh¹ ¹National Instt. of Technology, India, ²Indian Instt. of Info. Techn., India	YVO4:Eu3+ inverse opal is prepared by using polymythylmethacrylate template and its photonic stop band (PSB) appear at 500nm. We notice that the PL emission intensity of opal near the PSB is enhanced significantly
10:30	11:00	Break

ICNN9: Quantum Optics and Photonics
Chair: N. Grandjean(École polytechnique fédérale de Lausanne, Switzerland)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
11:00	11:30	ICNN9-1 Invited	Integrated Quantum Photonics on Silicon Chips	Carsten Schuck^1,2 ¹Physics Institute, University of Munster, Germany, ²Center for NanoTechnology (CeNTech), Munster, Germany	We present the integration of quantum light sources, nano-photonic circuit components and superconducting nanowire single-photon detectors with optical waveguides on silicon chips for realizing scalable photonic quantum technology at telecommunication wavelengths.
11:30	11:45	ICNN9-2	Fabrication Tolerant Polarization Beam Splitter with Easy Calibration	Nicolas Abadia^1,3, Md Ghulam Saber¹, Qiaoyin Lu², Wei-Hua Guo², David V. Plant¹, John F. Donegan³ ¹McGill Univeristy, Canada, ²Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, China, ³Trinity College Dublin, Ireland	In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. The experimental results show that an extinction ratio better than 15 dB and an on-chip loss of
11:45	12:00	ICNN9-3	Tunable Plasmonic Probe for Tip-enhanced Near-field Optical Microscopy	Mingqian Zhang Qian Xuesen Laboratory of Space Technology, China	A tunable plasmonic probe for tip-enhanced near-field optical microscopy is suggested. It consists of two sharp tips and an array of nanostructures. This device allows polarization-controlled tunable plasmonic directing and nano-focusing of the incident light.
12:00	13:30	Lunch Break

ICNN10: III-Nitride Quantum Dots
Chair: S. Matuso(NTT, Japan)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
13:30	14:00	ICNN10-1 Invited	Non-polar Nitride Single Photon Sources	R. A. Taylor¹, C. C. Kocher¹, T. J. Puchtler¹, J. C. Jarman², T. Zhu², T. Wang¹, L. Nuttall¹, R. A. Oliver² ¹University of Oxford, UK, ²University of Cambridge, UK	Measurements of single photon emission from non-polar InGaN single quantum dots pumped both optically and electrically will be presented. The dots emit at temperatures up to 220K. Electroluminescent emission with a g2 of 0.18 will be discussed.
14:00	14:15	ICNN10-2	Formation of GaN/AlN Quantum Dots	Frank Bertram, Hannes Schuermann, Gordon Schmidt, Peter Veit, Juergen Christen, Andre Stittmatter, Armin Dadgar, Christoph Berger University of Magdeburg, Germany	A systematic series of GaN/AlN quantum dot samples with varying growth interruption time after GaN deposition have been investigated by means of STEM as well as CL spectroscopy at low temperatures.
14:15	14:30	ICNN10-3	Ultra-Bright, Ultra-Pure Single Photons from InGaN Quantum Dots Embedded in Porous Micropillars	Helen Springbett¹, Kang Gao², Tongtong Zhu¹, Mark Holmes², Yasuhiko Arakawa², Rachel Oliver¹ ¹University of Cambridge, UK, ²The University of Tokyo, Japan	We present blue single photon emission from a self-assembled InGaN/GaN quantum dot with a uncorrected g(2)(0) value of ~0.12, achieved through enhancement by a meosporous distributed Bragg reflector micropillars and optimization of excitation conditions.
14:30	14:45	ICNN10-4	Investigation of The Fast Time Scale of The Spectral Diffusion in An Ingan Quantum Dot	Kang Gao¹, Helen Springbett², Tongtong Zhu², Rachel Oliver², Mark Holmes^1,3, Yasuhiko Arakawa^1,3 ¹Institute of Industrial Science, University of Tokyo, Japan, ²University of Cambridge, UK, ³NanoQuine, University of Tokyo, Japan	We present a study on the spectral diffusion time-scale from an InGaN QD via photon autocorrelation measurements, to investigate the spectral diffusion phenomena and compare with previous nanosecond scale spectral diffusion results from GaN QDs.
14:45	15:15	Break

ICNN11: Solar Cells & Fundamentals
Chair: S. Matuso(NTT, Japan)

Room 414 + 415

Start	End	Session No.	Title	Speaker	Description
15:15	15:30	ICNN11-1	Enhancement of Power Conversion Efficiency of Silicon Photovoltaic Cell Employing Arrays of Poly(Methyl Methacrylate-Co-Acrylic Acid) Nanospheres Embedded with Metallic Nanoparticles	Chee-Leong Lee¹, Swee-Yong Chee², Wee-Sheng Goh², Lai-Kuan Yik² ¹Wawasao Open University, Malaysia, ²University of Tunku Abdul Rahman, Malaysia	We demonstrate a novel light trapping approach using arrays of poly(methyl methacrylate-co-acrylic acid) nanospheres embedded with metallic nanoparticles with the relative enhancement of the power conversion efficiency of 179% if compared to the uncoated sample.
15:30	15:45	ICNN11-2	Polarization Dependent Photocurrent in InAs/GaAs Quantum Dot Superlattice Solar Cells	Yukihiro Harada, Junya Yamada, Daiki Watanabe, Shigeo Asahi, Takashi Kita Kobe University, Japan	We studied the polarization dependent two-step photocurrent in InAs/GaAs quantum dot superlattice solar cells. The observed photocurrent demonstrates the polarization dependence of the intraband transition induced by the mixing between the conduction and valence bands.
15:45	16:00	ICNN11-3	Extraction Efficiency of Up-Converted Electrons in Two-Step Photon Up-Conversion Solar Cells	Shigeo Asahi, Kenta Nishimura, Toshiyuki Kaizu, Takashi Kita Kobe University, Japan	Our newly proposing two-step photon up-conversion solar cell (TPU-SC) utilizes the two-step up-conversion phenomenon, which comprises wide gap semiconductor (WGS) and narrow gap semiconductor (NGS).
16:00	16:15	ICNN11-4	Saturation of Two-Photon Absorption in Layered Transition Metal Dichalcogenides: Experiment and Theory	Ningning Dong¹, Yuanxin Li¹, Saifeng Zhang¹, Niall McEvoy², Riley Gatensby², Georg S. Duesberg², Jun Wang¹ ¹Chinese Academy of Sciences, China, ²Trinity College Dublin, Ireland	The saturation of two-photon absorption (TPA) in four types of layered transition metal dichalcogenides (TMDCs) (MoS2, WS2, MoSe2, WSe2) was systemically studied both experimentally and theoretically.
16:15	16:30	ICNN11-5	Enhanced Laser-Damage Threshold and Nonlinear Optical Performances of Layered MoS2 Nanofilms Through Generation of MoO3 and Sulfur Vacancies	Xiaoyan Zhang¹, Yafeng Xie¹, Jiawei Huang¹, Saifeng Zhang¹, Jun Wang^1,2 ¹Shanghai Institute of Optics and Fine Mechanics (SIOM) Chinese Academy of Sciences, China, ²State Key Laboratory of High Field Laser Physics Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences, China	Layered MoS2 nanofilms with improved laser-damage threshold and tunable nonlinear optical performances for femtosecond laser pulses were fabricated via polyelectrolyte assisted solvothermal method.
16:30	16:45		CLOSING	Yasuhiko Arakawa The University of Tokyo, Japan